SI1912EDH trenchfet power mosfets: 1.8-v rated esd protected: 2000 v thermally enhanced sc-70 package
load switching pa switch level switch v ds (v) r ds(on) ( ) i d (a) 0.280 @ v gs = 4.5 v 1.28 20 0.360 @ v gs = 2.5 v 1.13 0.450 @ v gs = 1.8 v 1.0 marking code ca xx lot traceability and date code part # code yy d s g 1 k sot-363 sc-70 (6-leads) 6 4 1 2 3 5 top view s 1 g 1 d 2 d 1 g 2 s 2 d s g 1 k
parameter symbol 5 secs steady state unit drain-source voltage v ds 20 gate-source voltage v gs 12 v a t a = 25 c 1.28 1.13 continuous drain current (t j = 150 c) a t a = 85 c i d 0.92 0.81 pulsed drain current i dm 4 a continuous diode current (diode conduction) a i s 0.61 0.48 t a = 25 c 0.74 0.57 maximum power dissipation a t a = 85 c p d 0.38 0.30 w operating junction and storage temperature range t j , t stg ?55 to 150 c
parameter symbol typical maximum unit t 5 sec 130 170 maximum junction-to-ambient a steady state r thja 170 220 c/w maximum junction-to-foot (drain) steady state r thjf 80 100 c/w notes a. surface mounted on 1? x 1? fr4 board. 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 100 a 0.45 v v ds = 0 v, v gs = 4.5 v 1 a gate-body leakage i gss v ds = 0 v, v gs = 12 v 10 ma v ds = 16 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v, t j = 85 c 5 a on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 2 a v gs = 4.5 v, i d = 1.13 a 0.220 0.280 drain-source on-state resistance a r ds(on) v gs = 2.5 v, i d = 0.99 a 0.281 0.360 ds(on) v gs = 1.8 v, i d = 0.2 a 0.344 0.450 forward transconductance a g fs v ds = 10 v, i d = 1.13 a 2.6 s diode forward voltage a v sd i s = 0.48 a, v gs = 0 v 0.80 1.2 v dynamic b total gate charge q g 0.65 1.0 gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 1.13 a 0.2 nc gate-drain charge q gd 0.23 turn-on delay time t d(on) 45 70 rise time t r v dd = 10 v, r l = 20 85 130 turn-off delay time t d(off) v dd = 10 v, r l = 20 i d 0.5 a, v gen = 4.5 v, r g = 6 350 530 ns fall time t f 210 320 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com SI1912EDH product specification
|
